this is information on a product in full production. june 2012 doc id 023224 rev 1 1/7 7 STPS40L45C-Y automotive power schottky rectifier datasheet ? production data features low forward voltage drop meaning very small conduction losses low switching losses a llowing high frequency operation avalanche capability specified aec-q101 qualified description dual center tap schottky barrier rectifier designed for high frequency switched mode power supplies and dc to dc converters. packaged in d2pak, this device is intended for use in low voltage, high frequency inverters, free- wheeling and polarity protection for automotive applications. ? table 1. device summary symbol value i f(av) 2 x 20 a v rrm 45 v t j (max) 150 c v f (max) 0.49 v a1 a2 k a1 k a2 d2pak stps40l45cgy www.st.com
characteristics STPS40L45C-Y 2/7 doc id 023224 rev 1 1 characteristics when the diodes 1 and 2 are used simultaneously : t j (diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) . table 2. absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 45 v i f(rms) forward rms current 30 a i f(av) average forward current t c =130 c = 0.5 per diode per device 20 40 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 230 a i rrm repetitive peak reverse current t p = 2 s square f = 1 khz 2 a i rsm non repetitive peak reverse current t p = 100 s square 3 a p arm repetitive peak avalanche power t p = 1 s t j = 25 c 8100 w t stg storage temperature range -65 to + 150 c t j operating junction temperature (1) 1. condition to avoid thermal r unaway for a diode on its own heatsink -40 to + 150 c dv/dt critical rate of rise of reverse voltage 10000 v/s table 3. thermal resistances symbol parameter value unit r th (j-c) junction to case per diode to t a l 1.5 0.8 c/w r th(c) coupling 0.1 c/w table 4. static electrical characteristics (per diode) symbol parameter test conditions min. typ. max. unit i r (1) 1. pulse test: t p = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 0.28 x i f(av) + 0.0105 i f 2 (rms) reverse leakage current t j = 25 c v r = v rrm 0.6 ma t j = 125 c 140 280 ma v f (1) forward voltage drop t j = 25 c i f = 20 a 0.53 v t j = 125 c i f = 20 a 0.42 0.49 t j = 25 c i f = 40 a 0.69 t j = 125 c i f = 40 a 0.6 0.7 dptot dtj < 1 rth(j-a)
STPS40L45C-Y characteristics doc id 023224 rev 1 3/7 figure 1. average forward power dissipation versus average forward current (per diode) figure 2. average forward current versus ambient temperature ( = 0.5, per diode) 0 2 4 6 8 1012141618202224 0 2 4 6 8 10 12 14 16 p f(av) (w) = 0.05 = 0.1 = 0.2 = 0.5 = 1 t = t p /t t p i f(av) (a) 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 i f(av) (a) t = t p /t t p t amb (c) r th(j-a) = r th(j-c) r th(j-a) = 15 c/w figure 3. normalized avalanche power derating versus pulse duration figure 4. normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t p ) p (1 s) arm arm 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 p(t) p (25 c) arm j arm t (c) j figure 5. non repetitive surge peak forward current versus overload duration (maximum values, per diode) figure 6. relative variation of thermal impedance junction to case versus pulse duration 1e-3 1e-2 1e-1 1e+0 0 25 50 75 100 125 150 175 200 225 250 t(s) i m (a) tc = 25 c tc = 75 c tc = 125 c 1e-4 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 t = t p /t t p z th(j-c) /r th(j-c) t p (s) single pulse = 0.5 = 0.2 = 0.1
characteristics STPS40L45C-Y 4/7 doc id 023224 rev 1 figure 7. reverse leakage current versus reverse voltage applied (typical values, per diode) figure 8. junction capacitance versus reverse voltage applied (typical values, per diode) 0 5 10 15 20 25 30 35 40 45 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 i r (ma) t j = 150 c t j = 125 c t j = 75 c t j = 25 c v r (v) 1 10 100 0.1 1.0 10.0 c(nf) f=1mhz tj=25c vr(v) figure 9. forward voltage drop versus forward current (maximum values, per diode) figure 10. thermal resistance junction to ambient versus copper surface under tab. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000 vfm(v) ifm(a) typical values tj=150c tj=125c tj=75c tj=25c 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 s (cu) (cm2) r (c/w) th(j-a) epoxy printed board fr4, copper thickness = 35 m
STPS40L45C-Y package information doc id 023224 rev 1 5/7 2 package information epoxy meets ul94, v0 cooling method: by conduction (c) in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 11. footprint (dimensions in mm) table 5. d 2 pak dimensions ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 m 2.40 3.20 0.094 0.126 r 0.40 typ. 0.016 typ. v2 0 8 0 8 g l l3 l2 b b2 e * flat zone no less than 2m m a c2 d r a2 m v2 c a1 * 16.90 10.30 8.90 3.70 5.08 1.30
ordering information STPS40L45C-Y 6/7 doc id 023224 rev 1 3 ordering information 4 revision history table 6. ordering information order code marking package weight base qty delivery mode stps40l45cgy-tr stps40l45cgy d2pak 1.8 g 500 tape and reel table 7. document revision history date revision changes 25-jun-2012 1 first issue.
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